Dual SiC N-Channel MOSFET, 201 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB011N04NF2SATMA1

Description

Maximum Drain Source Voltage: 40 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: PG-TO263-3

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 201 A

Transistor Material: SiC

Pin Count: 3

This is Dual SiC N-Channel MOSFET 201 A 40 V 3-Pin PG-TO263-3 manufactured by Infineon. The manufacturer part number is IPB011N04NF2SATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-3. It consists of 2 elements per chip. While 201 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.