Dual SiC N-Channel MOSFET, 282 A, 60 A, 7-Pin PG-TO263-7 Infineon IPF012N06NF2SATMA1

Description

Maximum Drain Source Voltage: 60 A

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: PG-TO263-7

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 282 A

Transistor Material: SiC

Pin Count: 7

This is Dual SiC N-Channel MOSFET 282 A 60 A 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is IPF012N06NF2SATMA1. It has a maximum of 60 a drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-7. It consists of 2 elements per chip. While 282 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins.