Description
Dimensions: 10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current: 38 A
Transistor Material: Si
Width: 9.65mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 300 V
Package Type: D2PAK
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 3V
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 56 nC @ 10 V
Channel Type: N
Typical Input Capacitance @ Vds: 2510 pF @ 25 V Length: 10.67mm Pin Count: 3 Typical Turn-Off Delay Time: 133 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 313 W Series: UniFET Maximum Gate Source Voltage: ±30 V Height: 4.83mm Typical Turn-On Delay Time: 33 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 120 mΩ
This is Fairchild N-channel MOSFET 38 A 300 V UniFET 3-Pin D2PAK manufactured by Fairchild Semiconductor. The manufacturer part number is FDB38N30U. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2510 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 133 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 313 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.83mm. In addition, it has a typical 33 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 120 mω maximum drain source resistance.
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