FS3 T IGBT 75A 650V 4WL

Description

Dimensions: 15.8 x 5.2 x 22.74mm

Mounting Type: Through Hole

Maximum Power Dissipation: 455 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: P

Maximum Continuous Collector Current: 150 A

Maximum Gate Emitter Voltage: ±20V

Package Type: TO-247

Minimum Operating Temperature: -55 °C

Switching Speed: 1MHz

Gate Capacitance: 3710pF

Maximum Operating Temperature: +175 °C Pin Count: 4 Transistor Configuration: Single Current – Collector (Ic) (Max): 150A Detailed Description: IGBT Trench Field Stop 650V 150A 455W Through Hole TO-247-4 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Td (on/off) @ 25°C: 55ns/189ns Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Package / Case: TO-247-4 Gate Charge: 126nC Base Part Number: FGH75 Voltage – Collector Emitter Breakdown (Max): 650V Reverse Recovery Time (trr): 36ns Switching Energy: 1.06mJ (on), 1.56mJ (off) Test Condition: 400V, 75A, 15Ohm, 15V Manufacturer: ON Semiconductor IGBT Type: Trench Field Stop Current – Collector Pulsed (Icm): 300A Mounting Type: Through Hole Supplier Device Package: TO-247-4 Packaging: Tube Power – Max: 455W Customer Reference:

This is FS3 T IGBT 75A 650V 4WL manufactured by ON Semiconductor. The manufacturer part number is FGH75T65SHDTLN4. The given dimensions of the product include 15.8 x 5.2 x 22.74mm. The product is available in through hole configuration. Provides up to 455 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 150 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 3710pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration. The maximum collector current includes 150a. It features igbt trench field stop 650v 150a 455w through hole to-247-4. Features 2.1v @ 15v, 75a. Td (on/off) value of 55ns/189ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-4. Features 126nc gate charge. Base Part Number: fgh75. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 36ns. Provide switching energy up to 1.06mj (on), 1.56mj (off). Test condition included 400v, 75a, 15ohm, 15v. The on semiconductor’s product offers user-desired applications. Features an IGBT trench field stop type. With a current – collector pulsed of [Current – Collector Pulsed (lcm)] . to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 455w.