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Infineon AUIRFP4409 N-channel MOSFET, 38 A, 300 V HEXFET, 3-Pin TO-247

Original price was: £3,47.Current price is: £1,04.

SKU: ET13798357 Category: Tag:

Description

Maximum Continuous Drain Current: 38 A

Transistor Material: Si

Width: 5.2mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 300 V

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 83 nC @ 10 V

Channel Type: N

Length: 21.1mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 341 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 16.13mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 69 mΩ

This is N-channel MOSFET 38 A 300 V HEXFET 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is AUIRFP4409. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.2mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 83 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 21.1mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 341 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.13mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 69 mω maximum drain source resistance.

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