Infineon BSC028N06NSATMA1 N-channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON

Description

Maximum Drain Source Voltage: 60 V

Typical Gate Charge @ Vgs: 37 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 83 W

Series: OptiMOS™ 5

Maximum Gate Source Voltage: -20 V, +20 V

Height: 1.1mm

Width: 5.35mm

Length: 6.1mm

Maximum Drain Source Resistance: 4.2 mΩ

Package Type: TDSON

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 100 A Transistor Material: Si Forward Diode Voltage: 1.2V Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 8 Transistor Configuration: Single

This is N-channel MOSFET 100 A 60 V OptiMOS 5 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC028N06NSATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 83 w maximum power dissipation. The product optimos™ 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. It provides up to 4.2 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.