Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

Description

Mounting Type: Chassis Mount

Maximum Power Dissipation: 285 W

Maximum Collector Emitter Voltage: 1200 V

Number of Transistors: 2

Maximum Continuous Collector Current: 50 A

Maximum Gate Emitter Voltage: ±20V

Package Type: AG-34MM

Configuration: Dual

This is Dual IGBT 50 A 1200 V AG-34MM Chassis Mount manufactured by Infineon. The manufacturer part number is FF50R12RT4HOSA1. The product is available in chassis mount configuration. Provides up to 285 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-34mm. The product is available in dual configuration.