Description
Mounting Type: Chassis Mount
Maximum Power Dissipation: 20 mW
Maximum Collector Emitter Voltage: 1200 V
Number of Transistors: 7
Channel Type: N
Maximum Continuous Collector Current: 100 A
Maximum Gate Emitter Voltage: ±20V
Package Type: Module
Configuration: 3 Phase
Pin Count: 31
Transistor Configuration: 3 Phase
This is 3 Phase IGBT 100 A 1200 V 31-Pin Module Chassis Mount manufactured by Infineon. The manufacturer part number is FP100R12N2T7BPSA1. The product is available in chassis mount configuration. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of module. The product is available in 3 phase configuration. It contains 31 pins. The product offers 3 phase transistor configuration.
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