Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

Description

Maximum Power Dissipation: 280 W

Maximum Collector Emitter Voltage: 1200 V

Number of Transistors: 7

Maximum Continuous Collector Current: 75 A

Maximum Gate Emitter Voltage: ±20V

This is IGBT Module 75 A 1200 V manufactured by Infineon. The manufacturer part number is FP50R12KE3BOSA1. Provides up to 280 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 75 a continuous collector current . It offers a maximum ±20v gate emitter voltage .