Description
Maximum Power Dissipation: 20 mW
Maximum Collector Emitter Voltage: 950 V
Number of Transistors: 6
Maximum Continuous Collector Current: 70 A
Maximum Gate Emitter Voltage: ±20V
This is IGBT Module 70 A 950 V manufactured by Infineon. The manufacturer part number is FS3L200R10W3S7FB94BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 950 v of collector emitter voltage (max). It has 6 transistors . The product has a maximum 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage .
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