Description
Mounting Type: Through Hole
Maximum Power Dissipation: 83 W
Maximum Collector Emitter Voltage: 650 V
Number of Transistors: 1
Channel Type: N
Maximum Continuous Collector Current: 30 A
Maximum Gate Emitter Voltage: ±20V
Package Type: TO-247-3-HCC
Configuration: Single
Pin Count: 3
Transistor Configuration: Single
This is Single IGBT 30 A 650 V 3-Pin TO-247-3-HCC Through Hole manufactured by Infineon. The manufacturer part number is IKWH30N65WR6XKSA1. The product is available in through hole configuration. Provides up to 83 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247-3-hcc. The product is available in single configuration. It contains 3 pins. The product offers single transistor configuration.
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