Infineon IPA105N15N3GXKSA1 N-channel MOSFET, 37 A, 150 V OptiMOS 3, 3-Pin TO-220FP

Description

Maximum Continuous Drain Current: 37 A

Transistor Material: Si

Width: 4.85mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 150 V

Package Type: TO-220 FP

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 41 nC @ 10 V

Channel Type: N

Length: 10.65mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 40.5 W Series: OptiMOS™ 3 Maximum Gate Source Voltage: -20 V, +20 V Height: 16.15mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 11.1 mΩ

This is N-channel MOSFET 37 A 150 V OptiMOS 3 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA105N15N3GXKSA1. While 37 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 41 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40.5 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 11.1 mω maximum drain source resistance.