Description
Category: Power MOSFET
Dimensions: 10.65 x 4.85 x 16.15mm
Maximum Continuous Drain Current: 17 A
Transistor Material: Si
Width: 4.85mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 550 V
Maximum Gate Threshold Voltage: 3.5V
Package Type: TO-220FP
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 2.5V
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 34 nC Channel Type: N Typical Input Capacitance @ Vds: 1800 pF@ 100 V Length: 10.65mm Pin Count: 3 Typical Turn-Off Delay Time: 80 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 139 W Series: CoolMOS CP Maximum Gate Source Voltage: ±30 V Height: 16.15mm Typical Turn-On Delay Time: 35 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 199 mΩ
This is N-channel MOSFET 17 A 550 V CoolMOS CP 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA50R199CP. It is of power mosfet category . The given dimensions of the product include 10.65 x 4.85 x 16.15mm. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1800 pf@ 100 v . Its accurate length is 10.65mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 80 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 139 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 16.15mm. In addition, it has a typical 35 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 199 mω maximum drain source resistance.
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