Description
Category: Power MOSFET
Dimensions: 10.36 x 15.95 x 4.57mm
Maximum Continuous Drain Current: 13.8 A
Transistor Material: Si
Width: 15.95mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 650 V
Package Type: TO-220
Number of Elements per Chip: 1
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 25.5 nC @ 10 V
Channel Type: N
Typical Input Capacitance @ Vds: 1190 pF @ 100 V Length: 10.36mm Pin Count: 3 Typical Turn-Off Delay Time: 36 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 104 W Series: CoolMOS P6 Maximum Gate Source Voltage: ±30 V Height: 4.57mm Typical Turn-On Delay Time: 12 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 0.9V Maximum Drain Source Resistance: 280 mΩ
This is N-channel MOSFET 13.8 A 650 V CoolMOS P6 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R280P6. It is of power mosfet category . The given dimensions of the product include 10.36 x 15.95 x 4.57mm. While 13.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 15.95mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1190 pf @ 100 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 36 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product coolmos p6, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.57mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 280 mω maximum drain source resistance.
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