Infineon IPW65R190CFDFKSA1 N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247

Description

Maximum Drain Source Voltage: 650 V

Typical Gate Charge @ Vgs: 68 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 151 W

Series: CoolMOS™ CFD

Maximum Gate Source Voltage: -30 V, +30 V

Height: 21.1mm

Width: 5.21mm

Length: 16.13mm

Maximum Drain Source Resistance: 190 mΩ

Package Type: TO-247

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 17.5 A Transistor Material: Si Forward Diode Voltage: 0.9V Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 17.5 A 650 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R190CFDFKSA1. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 68 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 151 w maximum power dissipation. The product coolmos™ cfd, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 17.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.