Infineon IRF3808SPBF N-channel MOSFET, 106 A, 75 V HEXFET, 3-Pin D2PAK

Description

Category: Power MOSFET

Dimensions: 10.67 x 9.65 x 4.83mm

Maximum Continuous Drain Current: 106 A

Transistor Material: Si

Width: 9.65mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 75 V

Maximum Gate Threshold Voltage: 4V

Package Type: D2PAK

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: 175 °C

Typical Gate Charge @ Vgs: 150 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 5310 pF @ 25 V Length: 10.67mm Pin Count: 3 Forward Transconductance: 100S Typical Turn-Off Delay Time: 68 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 200 W Series: HEXFET Maximum Gate Source Voltage: ±20 V Height: 4.83mm Typical Turn-On Delay Time: 16 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 7 mΩ

This is N-channel MOSFET 106 A 75 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF3808SPBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 106 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of 175 °c. With a typical gate charge at Vgs includes 150 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5310 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. The forward transconductance is 100s . Whereas, its typical turn-off delay time is about 68 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 7 mω maximum drain source resistance.