Infineon IRF8010SPBF N-channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK

Description

Category: Power MOSFET

Dimensions: 10.67 x 9.65 x 4.83mm

Maximum Continuous Drain Current: 80 A

Transistor Material: Si

Width: 9.65mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 2V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 0.6V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 81 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 3830 pF@ 25 V Length: 10.67mm Pin Count: 3 Typical Turn-Off Delay Time: 61 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 260 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 4.83mm Typical Turn-On Delay Time: 15 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 15 mΩ

This is N-channel MOSFET 80 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF8010SPBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3830 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 61 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 260 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 15 mω maximum drain source resistance.