Infineon IRFSL7430PBF N-channel MOSFET, 426 A, 40 V HEXFET, 3-Pin I2PAK

Description

Maximum Continuous Drain Current: 426 A

Transistor Material: Si

Width: 4.83mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Package Type: I2PAK (TO-262)

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 300 nC @ 10 V

Channel Type: N

Length: 10.67mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 375 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 9.65mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 1.2 mΩ

This is N-channel MOSFET 426 A 40 V HEXFET 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IRFSL7430PBF. While 426 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 300 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.65mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 1.2 mω maximum drain source resistance.