Infineon SPA08N80C3XKSA1 N-channel MOSFET, 8 A, 800 V CoolMOS C3, 3-Pin TO-220FP

Description

Maximum Continuous Drain Current: 8 A

Transistor Material: Si

Width: 4.85mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 800 V

Maximum Gate Threshold Voltage: 3.9V

Package Type: TO-220 FP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 45 nC @ 10 V

Channel Type: N

Length: 10.65mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 40 W Series: CoolMOS™ C3 Maximum Gate Source Voltage: -30 V, +30 V Height: 16.15mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 1.5 Ω

This is N-channel MOSFET 8 A 800 V CoolMOS C3 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is SPA08N80C3XKSA1. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product coolmos™ c3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.5 ω maximum drain source resistance.