Description
Category: Power MOSFET
Dimensions: 10.31 x 9.45 x 4.57mm
Maximum Continuous Drain Current: 11 A
Transistor Material: Si
Width: 9.45mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 650 V
Maximum Gate Threshold Voltage: 3.9V
Package Type: TO-263
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 2.1V
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 45 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 1200 pF @ 25 V Length: 10.31mm Pin Count: 3 Typical Turn-Off Delay Time: 44 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 125 W Series: CoolMOS C3 Maximum Gate Source Voltage: ±20 V Height: 4.57mm Typical Turn-On Delay Time: 10 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 380 mΩ
This is N-channel MOSFET 11 A 650 V CoolMOS C3 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is SPB11N60C3. It is of power mosfet category . The given dimensions of the product include 10.31 x 9.45 x 4.57mm. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1200 pf @ 25 v . Its accurate length is 10.31mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 44 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.57mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 380 mω maximum drain source resistance.
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