IXYS IXFN62N80Q3

Description

Category: Power MOSFET

Dimensions: 38.23 x 25.07 x 9.6mm

Maximum Continuous Drain Current: 49 A

Transistor Material: Si

Width: 25.07mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 800 V

Maximum Gate Threshold Voltage: 6.5V

Package Type: SOT-227B

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 270 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 13600 pF @ 25 V Length: 38.23mm Pin Count: 4 Typical Turn-Off Delay Time: 62 ns Mounting Type: Panel Mount Channel Mode: Enhancement Maximum Power Dissipation: 780 W Series: HiperFET, Q3-Class Maximum Gate Source Voltage: ±30 V Height: 9.6mm Typical Turn-On Delay Time: 54 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 140 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: SOT-227-4, miniBLOC Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V title: IXFN62N80Q3 Vgs(th) (Max) @ Id: 6.5V @ 8mA REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 960W (Tc) standardLeadTime: 46 Weeks Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Mounting Type: Chassis Mount Series: HiPerFET™, Q3 Class Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Supplier Device Package: SOT-227B Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 49A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: IXFN62 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is IXFN62N80Q3. It is of power mosfet category . The given dimensions of the product include 38.23 x 25.07 x 9.6mm. While 49 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 25.07mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. The package is a sort of sot-227b. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 270 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 13600 pf @ 25 v . Its accurate length is 38.23mm. It contains 4 pins. Whereas, its typical turn-off delay time is about 62 ns . The product is available in panel mount configuration. The product carries enhancement channel mode. Provides up to 780 w maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.6mm. In addition, it has a typical 54 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 140 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 140mohm @ 31a, 10v. The typical Vgs (th) (max) of the product is 6.5v @ 8ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960w (tc). It has a long 46 weeks standard lead time. The product’s input capacitance at maximum includes 13600 pf @ 25 v. The product is available in chassis mount configuration. The product hiperfet™, q3 class, is a highly preferred choice for users. The maximum gate charge and given voltages include 270 nc @ 10 v. sot-227b is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 49a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn62, a base product number of the product. The product is designated with the ear99 code number.