IXYS MMIX1F230N20T

Description

Category: Power MOSFET

Dimensions: 25.25 x 23.25 x 5.7mm

Maximum Continuous Drain Current: 168 A

Transistor Material: Si

Width: 23.25mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 200 V

Maximum Gate Threshold Voltage: 5V

Package Type: SMPD

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 358 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 24000 pF@ 25 V Length: 25.25mm Pin Count: 24 Forward Transconductance: 150S Typical Turn-Off Delay Time: 62 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 600 W Series: GigaMOS, HiperFET Maximum Gate Source Voltage: -30 V, +30 V Height: 5.7mm Typical Turn-On Delay Time: 58 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 8.3 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: 24-PowerSMD, 21 Leads Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Vgs(th) (Max) @ Id: 5V @ 8mA REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 600W (Tc) standardLeadTime: 27 Weeks Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V Mounting Type: Surface Mount Series: GigaMOS™, HiPerFET™, TrenchT2™ Supplier Device Package: 24-SMPD Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 168A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: MMIX1F230 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is MMIX1F230N20T. It is of power mosfet category . The given dimensions of the product include 25.25 x 23.25 x 5.7mm. While 168 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 358 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 24000 pf@ 25 v . Its accurate length is 25.25mm. It contains 24 pins. The forward transconductance is 150s . Whereas, its typical turn-off delay time is about 62 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 600 w maximum power dissipation. The product gigamos, hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.7mm. In addition, it has a typical 58 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 8.3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 8.3mohm @ 60a, 10v. The maximum gate charge and given voltages include 378 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 8ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 600w (tc). It has a long 27 weeks standard lead time. The product’s input capacitance at maximum includes 28000 pf @ 25 v. The product gigamos™, hiperfet™, trencht2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 168a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f230, a base product number of the product. The product is designated with the ear99 code number.