N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK Vishay SIHB17N80AE-GE3

Description

Maximum Drain Source Voltage: 800 V

Maximum Continuous Drain Current: 15 A

Mounting Type: Surface Mount

Series: E

Channel Type: N

Maximum Gate Threshold Voltage: 2 → 4V

Maximum Drain Source Resistance: 0.25 Ω

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Pin Count: 3

This is N-Channel MOSFET 15 A 800 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB17N80AE-GE3. It has a maximum of 800 v drain source voltage. While 15 a of maximum continuous drain current. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.25 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.