N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK Infineon IPB017N10N5LFATMA1

Description

Maximum Drain Source Voltage: 100 V

Maximum Continuous Drain Current: 180 A

Mounting Type: Surface Mount

Series: OptiMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4.1V

Maximum Drain Source Resistance: 0.0017 Ω

Package Type: D2PAK-7

Number of Elements per Chip: 1

Pin Count: 7

This is N-Channel MOSFET 180 A 100 V 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB017N10N5LFATMA1. It has a maximum of 100 v drain source voltage. While 180 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.1v of maximum gate threshold voltage. It provides up to 0.0017 ω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. It contains 7 pins.