N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK Infineon IPA60R160P7XKSA1

Description

Maximum Drain Source Voltage: 1200 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™ P7

Channel Type: N

Maximum Gate Threshold Voltage: 4.5V

Maximum Drain Source Resistance: 160 mΩ

Package Type: TO-220 FP

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 20 A

Transistor Material: Si

Pin Count: 3

This is N-Channel MOSFET 20 A 1200 V 3-Pin TO-220 FullPAK manufactured by Infineon. The manufacturer part number is IPA60R160P7XKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 160 mω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.