N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: CoolMOS™ C7

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 99 mΩ

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 22 A

Transistor Material: Si

Pin Count: 3

This is N-Channel MOSFET 22 A 600 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB60R099C7ATMA1. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ c7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 99 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.