N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK Infineon IPB65R095C7ATMA2

Description

Maximum Drain Source Voltage: 650 V

Maximum Continuous Drain Current: 24 A

Mounting Type: Surface Mount

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 95 mO

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Pin Count: 3

This is N-Channel MOSFET 24 A 650 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R095C7ATMA2. It has a maximum of 650 v drain source voltage. While 24 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 95 mo maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.