N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK Vishay SIHB125N60EF-GE3

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: SiHB125N60EF

Channel Type: N

Maximum Gate Threshold Voltage: 5V

Maximum Drain Source Resistance: 0.125 Ω

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 25 A

Pin Count: 3

This is N-Channel MOSFET 25 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB125N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sihb125n60ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.125 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 25 a of maximum continuous drain current. It contains 3 pins.