N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN onsemi FDMS4D0N12C

Description

Maximum Continuous Drain Current: 67 A

Width: 6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 120 V

Maximum Gate Threshold Voltage: 4V

Package Type: PQFN 5 x 6

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 36 nC @ 6 V

Channel Type: N

Length: 5mm

Pin Count: 8 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 106 W Maximum Gate Source Voltage: ±20 V Height: 1.05mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 4 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4V @ 370A Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerTDFN Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 6V, 10VPackage: Tape & Reel (TR) Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 2.7W (Ta), 106W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V standardLeadTime: 26 Weeks Mounting Type: Surface Mount Series: PowerTrench® Supplier Device Package: 8-PQFN (5×6) Current – Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: FDMS4 ECCN: EAR99

This is N-Channel MOSFET 67 A 120 V 8-Pin PQFN manufactured by onsemi. The manufacturer part number is FDMS4D0N12C. While 67 a of maximum continuous drain current. Furthermore, the product is 6mm wide. The product offers single transistor configuration. It has a maximum of 120 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn 5 x 6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 36 nc @ 6 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 106 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 4 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 370a. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 4mohm @ 67a, 10v. The maximum gate charge and given voltages include 82 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.7w (ta), 106w (tc). The product’s input capacitance at maximum includes 6460 pf @ 60 v. It has a long 26 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5×6) is the supplier device package value. The continuous current drain at 25°C is 18.5a (ta), 114a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms4, a base product number of the product. The product is designated with the ear99 code number.