N-Channel MOSFET, 70 A, 100 V, 3-Pin TO-3PN onsemi FQA70N10

Description

Maximum Continuous Drain Current: 70 A

Transistor Material: Si

Width: 5mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Package Type: TO-3PN

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 85 nC @ 10 V

Channel Type: N

Length: 15.8mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 214 W Series: QFET Maximum Gate Source Voltage: -25 V, +25 V Height: 18.9mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 23 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-3P-3, SC-65-3 Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V title: FQA70N10 Vgs(th) (Max) @ Id: 4V @ 250µA REACH Status: REACH Unaffected edacadModel: FQA70N10 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/1057393 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): Not Applicable Power Dissipation (Max): 214W (Tc) standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Mounting Type: Through Hole Series: QFET® Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Supplier Device Package: TO-3PN Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 70A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: FQA70 ECCN: EAR99

This is N-Channel MOSFET 70 A 100 V 3-Pin TO-3PN manufactured by onsemi. The manufacturer part number is FQA70N10. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 18.9mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 23 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 23mohm @ 35a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 214w (tc). It has a long 16 weeks standard lead time. The product’s input capacitance at maximum includes 3300 pf @ 25 v. The product qfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 110 nc @ 10 v. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqa70, a base product number of the product. The product is designated with the ear99 code number.