ON Semiconductor MJL1302AG

Description

Transistor Type: PNP

Dimensions: 20.3 x 5.3 x 29mm

Mounting Type: Through Hole

Maximum Power Dissipation: 200 W

Maximum Collector Emitter Saturation Voltage: 3 V dc

Maximum Collector Base Voltage: 260 V dc

Maximum Collector Emitter Voltage: 260 V

Maximum Operating Frequency: 30 MHz

Maximum Emitter Base Voltage: 5 V

Package Type: TO-264

Number of Elements per Chip: 1

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single Manufacturer Standard Lead Time: 33 Weeks Base Part Number: MJL13 Detailed Description: Bipolar (BJT) Transistor PNP 260V 15A 30MHz 200W Through Hole TO-264 DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V Transistor Type: PNP Frequency – Transition: 30MHz Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A Supplier Device Package: TO-264 Voltage – Collector Emitter Breakdown (Max): 260V Packaging: Tube Operating Temperature: -65°C ~ 150°C (TJ) Power – Max: 200W Customer Reference: Package / Case: TO-264-3, TO-264AA Current – Collector (Ic) (Max): 15A Current – Collector Cutoff (Max): 50µA (ICBO) Manufacturer: ON Semiconductor

This ismanufactured by ON Semiconductor. The manufacturer part number is MJL1302AG. The transistor is a pnp type. The given dimensions of the product include 20.3 x 5.3 x 29mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product has a maximum 3 v dc collector emitter saturation voltage . Additionally, it has 260 v dc maximum collector base voltage. Whereas features a 260 v of collector emitter voltage (max). It carries 30 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-264. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 33 weeks of manufacturer standard lead time. Base Part Number: mjl13. It features bipolar (bjt) transistor pnp 260v 15a 30mhz 200w through hole to-264. Furthermore, 75 @ 5a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 1a, 10a is the maximum Vce saturation. to-264 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 260v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-264-3, to-264aa. The maximum collector current includes 15a. In addition, 50µa (icbo) is the maximum current at collector cutoff. The on semiconductor’s product offers user-desired applications.