ON Semiconductor NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

Description

Dimensions: 66.2 x 32.8 x 11.9mm

Mounting Type: Surface Mount

Maximum Power Dissipation: 186 W

Maximum Collector Emitter Voltage: 1200 V

Channel Type: N

Maximum Gate Emitter Voltage: ±20V

Package Type: Q0BOOST

Minimum Operating Temperature: -40 °C

Configuration: Dual

Maximum Operating Temperature: +150 °C

Pin Count: 22

Transistor Configuration: Dual

This is ON Semiconductor Dual IGBT Module 1200 V 22-Pin Q0BOOST Surface Mount manufactured by onsemi. The manufacturer part number is NXH100B120H3Q0STG. The given dimensions of the product include 66.2 x 32.8 x 11.9mm. The product is available in surface mount configuration. Provides up to 186 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. It offers a maximum ±20v gate emitter voltage . The package is a sort of q0boost. Whereas, the minimum operating temperature of the product is -40 °c. The product is available in dual configuration. It has a maximum operating temperature of +150 °c. It contains 22 pins. The product offers dual transistor configuration.