onsemi NTP110N65S3HF

Description

Maximum Drain Source Voltage: 650 V

Typical Gate Charge @ Vgs: 62 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 240 W

Maximum Gate Source Voltage: ±30 V

Maximum Gate Threshold Voltage: 5V

Channel Type: N

Width: 4.7mm

Length: 10.67mm

Maximum Drain Source Resistance: 110 mΩ

Package Type: TO-220

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 30 A Minimum Gate Threshold Voltage: 3V Forward Diode Voltage: 1.3V Height: 16.3mm Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-220-3 Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Vgs(th) (Max) @ Id: 5V @ 740µA REACH Status: REACH Unaffected edacadModel: NTP110N65S3HF Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/9829148 Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): Not Applicable Power Dissipation (Max): 240W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V Mounting Type: Through Hole Series: FRFET®, SuperFET® III Supplier Device Package: TO-220-3 Packaging: Bulk Current – Continuous Drain (Id) @ 25°C: 30A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: NTP110 ECCN: EAR99

This ismanufactured by onsemi. The manufacturer part number is NTP110N65S3HF. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 62 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 240 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.7mm wide. Its accurate length is 10.67mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.3v . In addition, the height is 16.3mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 110mohm @ 15a, 10v. The maximum gate charge and given voltages include 62 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 740µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 240w (tc). The product’s input capacitance at maximum includes 2635 pf @ 400 v. The product frfet®, superfet® iii, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntp110, a base product number of the product. The product is designated with the ear99 code number.