P-Channel 80 V (D-S) MOSFET

Description

Maximum Drain Source Voltage: 80 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: TrenchFET

Channel Type: P

Maximum Gate Threshold Voltage: 2.5V

Maximum Drain Source Resistance: 0.0061 Ω

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 150 A

Transistor Material: Si

Pin Count: 3

This is P-Channel 80 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SUM60061EL-GE3. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0061 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.