Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM

Description

Maximum Continuous Collector Current: 40 A

Dimensions: 15.6 x 5.5 x 19.9mm

Mounting Type: Through Hole

Maximum Power Dissipation: 68.8 W

Maximum Operating Temperature: +175 °C

Maximum Collector Emitter Voltage: 650 V

Height: 19.9mm

Width: 5.5mm

Length: 15.6mm

Maximum Gate Emitter Voltage: ±30V

Package Type: TO-3PFM

Channel Type: N

Gate Capacitance: 1550pF Pin Count: 3+Tab Transistor Configuration: Single

This is IGBT 40 A 650 V 3+Tab-Pin TO-3PFM manufactured by Renesas Electronics. The manufacturer part number is RJP65T43DPM-00#T1. The product has a maximum 40 a continuous collector current . The given dimensions of the product include 15.6 x 5.5 x 19.9mm. The product is available in through hole configuration. Provides up to 68.8 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 650 v of collector emitter voltage (max). In addition, the height is 19.9mm. Furthermore, the product is 5.5mm wide. Its accurate length is 15.6mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. The product is available in [Cannel Type] channel. It has approximately 1550pf gate capacitance . It contains 3+tab pins. The product offers single transistor configuration.