Description
Dimensions: 16 x 5 x 21mm
Mounting Type: Through Hole
Maximum Power Dissipation: 59 W
Maximum Collector Emitter Voltage: 650 V
Number of Transistors: 1
Channel Type: N
Maximum Continuous Collector Current: 26 A
Maximum Gate Emitter Voltage: ±30V
Package Type: TO-3PFM
Minimum Operating Temperature: -40 °C
Gate Capacitance: 57pF
Maximum Operating Temperature: +175 °C
Pin Count: 3 Transistor Configuration: Single
This is IGBT 26 A 650 V 3-Pin TO-3PFM manufactured by ROHM. The manufacturer part number is RGTH50TK65GC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 59 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 26 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 57pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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