ROHM RGTVX2TS65GC13 Single IGBT, 111 A 650 V, 3-Pin TO-247GE, Through Hole

Description

Mounting Type: Through Hole

Maximum Power Dissipation: 319 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: N

Maximum Continuous Collector Current: 111 A

Maximum Gate Emitter Voltage: ±30V

Package Type: TO-247GE

Configuration: Single

Pin Count: 3

This is Single IGBT 111 A 650 V 3-Pin TO-247GE Through Hole manufactured by ROHM. The manufacturer part number is RGTVX2TS65GC13. The product is available in through hole configuration. Provides up to 319 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 111 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247ge. The product is available in single configuration. It contains 3 pins.