ROHM RJ1G12BGNTLL N-channel MOSFET, 120 A, 40 V RJ1G12BGN, 2+Tab-Pin D2PAK

Description

Maximum Continuous Drain Current: 120 A

Width: 9.2mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Maximum Gate Threshold Voltage: 2.5V

Package Type: TO-263AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 165 nC @ 10 V

Channel Type: N

Length: 10.4mm

Pin Count: 2 + Tab Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 178 W Series: RJ1G12BGN Maximum Gate Source Voltage: ±20 V Height: 4.7mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 2.08 mΩ

This is N-channel MOSFET 120 A 40 V RJ1G12BGN 2+Tab-Pin D2PAK manufactured by ROHM. The manufacturer part number is RJ1G12BGNTLL. While 120 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 165 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 2 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 178 w maximum power dissipation. The product rj1g12bgn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.08 mω maximum drain source resistance.