SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247™ STMicroelectronics SCTWA30N120

Description

Maximum Drain Source Voltage: 1200 V

Mounting Type: Through Hole

Channel Mode: Depletion

Series: SCT

Channel Type: N

Maximum Gate Threshold Voltage: 3.5V

Maximum Drain Source Resistance: 0.09 Ω

Package Type: HiP247

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 45 A

Transistor Material: SiC

Pin Count: 3

FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ) Operating Temperature: -55°C ~ 200°C (TJ) Package / Case: TO-247-3 Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V edacadModel: SCTWA30N120 Models Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 20V edacadModelUrl: /en/models/7313411Package: Tube Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 270W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 VMounting Type: Through Hole Series: – Supplier Device Package: HiP247™ Long Leads Current – Continuous Drain (Id) @ 25°C: 45A (Tc) Technology: SiCFET (Silicon Carbide) Base Product Number: SCTWA30 ECCN: EAR99

This is SiC N-Channel MOSFET Module 45 A 1200 V Depletion 3-Pin HiP247™ manufactured by STMicroelectronics. The manufacturer part number is SCTWA30N120. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.09 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma (typ). The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 100mohm @ 20a, 20v. The maximum gate charge and given voltages include 105 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 270w (tc). The product’s input capacitance at maximum includes 1700 pf @ 400 v. hip247™ long leads is the supplier device package value. The continuous current drain at 25°C is 45a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctwa30, a base product number of the product. The product is designated with the ear99 code number.