Silicon N-Channel MOSFET, 109 A, 600 V, 4-Pin PG-TO 247-4 Infineon IPZ60R017C7XKSA1

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.017 Ω

Package Type: TO-247-4

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 109 A

Transistor Material: Silicon

Pin Count: 4

This is Silicon N-Channel MOSFET 109 A 600 V 4-Pin PG-TO 247-4 manufactured by Infineon. The manufacturer part number is IPZ60R017C7XKSA1. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.017 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 109 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.