Description
Maximum Drain Source Voltage: 650 V
Mounting Type: Through Hole
Channel Mode: Enhancement
Channel Type: N
Package Type: TO-220
Number of Elements per Chip: 1
Maximum Continuous Drain Current: 14 A
Transistor Material: Silicon
Pin Count: 3
This is Silicon N-Channel MOSFET 14 A 650 V 3-Pin TO-220 manufactured by Vishay. The manufacturer part number is SIHF074N65E-GE3. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-220. It consists of 1 elements per chip. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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