Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin PG-TO 220-3 Infineon IPP60R070CFD7XKSA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4.5V

Maximum Drain Source Resistance: 0.07 Ω

Package Type: TO-220

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 31 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 31 A 650 V 3-Pin PG-TO 220-3 manufactured by Infineon. The manufacturer part number is IPP60R070CFD7XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.07 ω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 31 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.