Silicon N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-3P Renesas 2SK1835-E

Description

Maximum Drain Source Voltage: 1500 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Channel Type: N

Maximum Drain Source Resistance: 4.6 Ω

Package Type: TO-3PN

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 4 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 4 A 1500 V 3-Pin TO-3P Renesas manufactured by Renesas Electronics. The manufacturer part number is 2SK1835-E. It has a maximum of 1500 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. It provides up to 4.6 ω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.