Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin PG-TO 247 Infineon IPW60R041P6FKSA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4.5V

Maximum Drain Source Resistance: 0.041 Ω

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 77.5 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 77.5 A 650 V 3-Pin PG-TO 247 manufactured by Infineon. The manufacturer part number is IPW60R041P6FKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.041 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 77.5 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.