STMicroelectronics SCT10N120H

Description

Maximum Drain Source Voltage: 1200 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: SCT10N120H

Channel Type: N

Maximum Gate Threshold Voltage: 3.5V

Maximum Drain Source Resistance: 0.52 Ω

Package Type: HiP247

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 12 A

Transistor Material: SiC

Pin Count: 3

FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 3.5V @ 250µA Operating Temperature: -55°C ~ 200°C (TJ) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V edacadModel: SCT10N120H Models Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 20V edacadModelUrl: /en/models/10414346Package: Tape & Reel (TR) Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 150W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 VMounting Type: Surface Mount Series: – Supplier Device Package: H2Pak-2 Current – Continuous Drain (Id) @ 25°C: 12A (Tc) Technology: SiCFET (Silicon Carbide) Base Product Number: SCT10 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is SCT10N120H. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sct10n120h, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.52 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 690mohm @ 6a, 20v. The maximum gate charge and given voltages include 22 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product’s input capacitance at maximum includes 290 pf @ 400 v. The product is available in surface mount configuration. h2pak-2 is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct10, a base product number of the product. The product is designated with the ear99 code number.