STMicroelectronics STP33N60DM6

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Depletion

Series: ST

Channel Type: N

Maximum Gate Threshold Voltage: 4.75V

Maximum Drain Source Resistance: 0.115 Ω

Package Type: TO-220FP

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 25 A

Transistor Material: SiC

Pin Count: 3

FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4.75V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-220-3 Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: STP33N60DM6 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/10414716Package: Tube Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): Not Applicable Power Dissipation (Max): 190W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V standardLeadTime: 14 Weeks Mounting Type: Through Hole Series: MDmesh™ M6 Supplier Device Package: TO-220 Current – Continuous Drain (Id) @ 25°C: 25A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STP33 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STP33N60DM6. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product st, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.115 ω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 128mohm @ 12.5a, 10v. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 190w (tc). The product’s input capacitance at maximum includes 1500 pf @ 100 v. It has a long 14 weeks standard lead time. The product mdmesh™ m6, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 25a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp33, a base product number of the product. The product is designated with the ear99 code number.