STMicroelectronics STW70N65DM6-4

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Depletion

Series: ST

Channel Type: N

Maximum Gate Threshold Voltage: 4.75V

Maximum Drain Source Resistance: 0.036 Ω

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 68 A

Transistor Material: SiC

Pin Count: 3

FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-4 Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Vgs(th) (Max) @ Id: 4.75V @ 250µA REACH Status: REACH Unaffected edacadModel: STW70N65DM6-4 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/11591028Package: Tube Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 450W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V Qualification: AEC-Q101 standardLeadTime: 26 Weeks Mounting Type: Through Hole Grade: Automotive Series: – Supplier Device Package: TO-247-4 Current – Continuous Drain (Id) @ 25°C: 68A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STW70 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STW70N65DM6-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product st, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.036 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 68 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 40mohm @ 34a, 10v. The maximum gate charge and given voltages include 125 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 450w (tc). The product’s input capacitance at maximum includes 4900 pf @ 100 v. It has a long 26 weeks standard lead time. The product is automotive, a grade of class. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 68a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw70, a base product number of the product. The product is designated with the ear99 code number.