Taiwan Semi TSM70N600CP ROG N-channel MOSFET, 8 A, 700 V, 3 + Tab-Pin DPAK

Description

Maximum Continuous Drain Current: 8 A

Width: 6.1mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 700 V

Maximum Gate Threshold Voltage: 4V

Package Type: DPAK (TO-252)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 12.6 nC @ 10 V

Channel Type: N

Length: 6.6mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 83 W Maximum Gate Source Voltage: ±30 V Height: 2.3mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.4V Maximum Drain Source Resistance: 600 mΩ

This is Taiwan Semi N-channel MOSFET 8 A 700 V 3 + Tab-Pin DPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM70N600CP ROG. While 8 a of maximum continuous drain current. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 83 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 600 mω maximum drain source resistance.