Texas Instruments CSD19535KCS

Description

Maximum Continuous Drain Current: 187 A

Transistor Material: Si

Width: 4.7mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 3.4V

Package Type: TO-220

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 78 nC @ 10 V

Channel Type: N

Length: 10.67mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 300 W Series: NexFET Maximum Gate Source Voltage: -20 V, +20 V Height: 16.51mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 4.4 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-220-3 Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Vgs(th) (Max) @ Id: 3.4V @ 250µA REACH Status: REACH Unaffected edacadModel: CSD19535KCS Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 6V, 10V edacadModelUrl: /en/models/4863279 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): Not Applicable Power Dissipation (Max): 300W (Tc) standardLeadTime: 6 Weeks Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V Mounting Type: Through Hole Series: NexFET™ Supplier Device Package: TO-220-3 Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 150A (Ta) Technology: MOSFET (Metal Oxide) Base Product Number: CSD19535 ECCN: EAR99

This ismanufactured by Texas Instruments. The manufacturer part number is CSD19535KCS. While 187 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.4 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 3.6mohm @ 100a, 10v. The maximum gate charge and given voltages include 101 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 300w (tc). It has a long 6 weeks standard lead time. The product’s input capacitance at maximum includes 7930 pf @ 50 v. The product nexfet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 150a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd19535, a base product number of the product. The product is designated with the ear99 code number.