Vishay SUM70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin D2PAK

Description

Maximum Continuous Drain Current: 120 A

Transistor Material: Si

Width: 10.41mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.5V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 76 nC @ 10 V

Channel Type: N

Length: 9.65mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 375 W Maximum Gate Source Voltage: -20 V, +20 V Height: 4.82mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.5V Maximum Drain Source Resistance: 4.6 mΩ

This is N-channel MOSFET 120 A 100 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SUM70040E-GE3. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.41mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 76 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 9.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 4.6 mω maximum drain source resistance.